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Recently, transistor scaling is approaching its physical limit, hindering the further development of the computing capability. In the post-Moore era, emerging logic and storage devices have been the fundamental hardware for expanding the capability of intelligent computing. In this article, the recent progress of ferroelectric devices for intelligent computing is reviewed. The material properties and electrical characteristics of ferroelectric devices are elucidated, followed by a discussion of novel ferroelectric materials and devices that can be used for intelligent computing. Ferroelectric capacitors, transistors, and tunneling junction devices used for low-power logic, high-performance memory, and neuromorphic applications are comprehensively reviewed and compared. In addition, to provide useful guidance for developing high-performance ferroelectric-based intelligent computing systems, the key challenges for realizing ultrascaled ferroelectric devices for high-efficiency computing are discussed.