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A new closed-form approximation for surface potential and drain current (DC) in symmetric double-gate polysilicon thin-film transistors (DG poly-Si TFTs) is proposed. The solution of the surface potential is single-piece and suitable for a wide range of gate voltages under different conditions. A comparison with numerical results shows that this scheme gives an accurate description of surface potential. The development of surface-potential-based compact model for I-V characteristics is achieved based on this calculation. Finally, the validity of the model is verified by comparisons with various experimental data. It is showing that the model is accurate over a wide range of operation regions.