The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN
oleh: Michael A. Reshchikov, Michal Bockowski
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2024-01-01 |
Deskripsi
Photoluminescence (PL) from Be-doped bulk GaN crystals grown by the High Nitrogen Pressure Solution method was studied and compared with PL from GaN:Be layers on sapphire grown by molecular beam epitaxy and metalorganic chemical vapor deposition techniques. The yellow luminescence band in the latter is caused by the isolated Be<sub>Ga</sub> acceptor (the YL<sub>Be</sub> band), while the broad yellow band in bulk GaN:Be crystals is a superposition of the YL<sub>Be</sub> band and another band, most likely the C<sub>N</sub>-related YL1 band. The attribution of the yellow band in bulk GaN:Be crystals to the Be<sub>Ga</sub>O<sub>N</sub> complex (a deep donor) is questioned.