Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
oleh: Xuejiao Gao, Bin Guan, Abdelmadjid Mesli, Kaixiang Chen, Yaping Dan
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2018-01-01 |
Deskripsi
Molecular monolayer doping has been used as an enabling method for the fabrication of shallow junctions in CMOS devices. Here, Gao et al. show that an undesirable reduced ionization rate during this process can be induced by carbon defects, which electronically deactivate phosphorus dopants in silicon.