Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

oleh: Ying Zhang, Ge-Qi Mao, Xiaolong Zhao, Yu Li, Meiyun Zhang, Zuheng Wu, Wei Wu, Huajun Sun, Yizhong Guo, Lihua Wang, Xumeng Zhang, Qi Liu, Hangbing Lv, Kan-Hao Xue, Guangwei Xu, Xiangshui Miao, Shibing Long, Ming Liu

Format: Article
Diterbitkan: Nature Portfolio 2021-12-01

Deskripsi

Understanding the mechanism of the formation and rupture of conductive filaments in HfO2-based memristors is essential to solve the problem of scalability of the devices. Here, Zhang et al. visualize this process by tracking atomic-scale evolution of conductive filaments during resistive switching cycles.