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The CuOx thin film photocathodes were deposited on F-doped SnO2 (FTO) transparent conducting glasses by alternating current (AC) magnetron reactive sputtering under different Ar:O2 ratios. The advantage of this deposited method is that it can deposit a CuOx thin film uniformly and rapidly with large scale. From the photoelectrochemical (PEC) properties of these CuOx photocathodes, it can be found that the CuOx photocathode with Ar/O2 30:7 provide a photocurrent density of −3.2 mA cm−2 under a bias potential −0.5 V (vs. Ag/AgCl), which was found to be twice higher than that of Ar/O2 with 30:5. A detailed characterization on the structure, morphology and electrochemical properties of these CuOx thin film photocathodes was carried out, and it is found that the improved PEC performance of CuOx semiconductor photocathode with Ar/O2 30:7 attributed to the less defects in it, indicating that this Ar/O2 30:7 is an optimized condition for excellent CuOx semiconductor photocathode fabrication. Keywords: CuOx thin film, Magnetron sputtering, Photocathode, Defect controlling