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In this paper, the influence of traps on the dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a switching power converter with floating buck-boost topology. A new scheme based on the voltage-dependent dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is proposed to extract the average activation energy of device degradation. The average activation energy obtained is 2.25 eV at 50&#x2013;200 V and 2.60 eV at 200&#x2013;600 V. In addition, the dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is accurately extracted by a unique extraction circuit with high switching frequency up to 1 MHz and high off-state voltage up to 600 V. Meanwhile, the switching times at turn-on and turn-off transitions are captured in a floating buck-boost converter, showing that the transconductance decreases with increasing drain voltage. Furthermore, the effect of parasitic output capacitor on the dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula> is investigated by an experimental method. Finally, a proper hard operating mode is proposed to alleviate the influence of the trapping effect on the performance of switching power converters.