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We demonstrated an effective approach to suppress conductive filament (CF) overgrowth through the introduction of a AgInSbTe (AIST) buffer layer into amorphous carbon-based electrochemical metallization memory devices. The overshoot current (I_OS) was monitored in real-time for the devices with and without the AIST layer. Our results indicates that the I_OS was eliminated after insertion of the buffer layer. The effect of the AIST layer on CF overgrowth suppression could be attributed to the lower V_SET and capacity to hold excess Ag-ions. The optimized Pt/a-C/AIST/Ag devices exhibited highly uniform switching parameters, fast switching speed (<;50 ns) and excellent cycling endurance (5×10⁶ cycles).