Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing
oleh: Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2020-01-01 |
Deskripsi
We have investigated transient I<sub>d</sub> - V<sub>g</sub> and I<sub>d</sub> - V<sub>d</sub> characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show transient negative capacitance (TNC) with polarization reversal and depolarization effect can result in sub-60mV/dec subthreshold swing (SS), reverse drain-induced barrier lowering (R-DIBL), and negative differential resistance (NDR) without traversing the quasi-static negative capacitance (QSNC) region of the S-shaped polarization-voltage (P - V) predicted by single-domain Landau theory. Moreover, the mechanisms of R-DIBL and NDR based on the TNC theory are discussed in detail. The results demonstrated in this work can be a possible explanation for the mechanism of previously reported negative capacitance field-effect transistor (NCFET) with sub-60mV/dec SS, R-DIBL, and NDR.