Effects of forming gas annealing on luminescence properties of erbium silicate thin films

oleh: Devika Vipin, Nikhil Modi, Tyler Reynolds, Bin Zhang, Natasha Tabassum, Gourav Bhowmik, Vasileios Nikas, Subha Chakraborty, Spyros Gallis, Mengbing Huang

Format: Article
Diterbitkan: AIP Publishing LLC 2019-06-01

Deskripsi

While hydrogen passivation has led to enhanced luminescence in many erbium doped materials, its effects on Er oxides/silicates compounds has rarely been demonstrated. Here we report effects of forming gas annealing on the luminescence properties in such Er compound materials. A broad band photoluminescence in the ultraviolet/visible range, likely arising from structural defects in the material, is significantly suppressed after forming gas annealing. Concurrently, the Er near-infrared luminescence intensity and its lifetime increase by about a factor of two and three, respectively. The samples are further characterized with Rutherford backscattering for composition information, optical absorption for optically excitable Er concentrations and extended x-ray absorption fine structures for Er local environments. We discuss the hydrogen passivation effects in the context of diffusion limited relaxation processes and suggest pathways to further improving near-infrared luminescence properties in Er compound materials.