UV Sensitivity of MOS Structures with Silicon Nanoclusters
oleh: Mario Curiel, Nicola Nedev, Judith Paz, Oscar Perez, Benjamin Valdez, David Mateos, Abraham Arias, Diana Nesheva, Emil Manolov, Roumen Nedev, Valeri Dzhurkov
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2019-05-01 |
Deskripsi
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiO<sub>x</sub> films with x = 1.15 for 60 min in N<sub>2</sub> at 1000 and 700 °C, respectively. XPS and TEM analysis prove phase separation and formation of Si nanocrystals in SiO<sub>2</sub>, while the a-Si NPs are formed in SiO<sub>1.7</sub> matrix. Both types of structures show selective sensitivity to UV light; the effect is more pronounced in the structure with nanocrystals. The responsivity of the nanocrystal structure to 365 nm UV light is ~ 4 times higher than that to green light at 4 V applied to the top contact. The observed effect is explained by assuming that only short wavelength radiation generates photocarriers in the amorphous and crystalline nanoclusters.