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We utilized laser irradiation as a potential technique in tuning the electrical performance of NiO_x/SiO₂ thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance was evaluated in terms of mobility, threshold voltage, on/off current ratio and subthreshold swing, all of which were derived from the transfer and output characteristics. The 500 laser pulses-irradiated NiO_x/SiO₂ TFT exhibited an enhanced mobility of 3 cm²/V-s from a value of 1.25 cm²/V-s for as-deposited NiO_x/SiO₂ TFT, subthreshold swing of 0.65 V/decade, on/off current ratio of 6.5 × 10⁴ and threshold voltage of −12.2 V. The concentration of defect gap states as a result of light absorption processes explains the enhanced performance of laser-irradiated NiO_x. Additionally, laser irradiation results in complex thermal and photo thermal changes, thus resulting in an enhanced electrical performance of the p-type NiO_x/SiO₂ TFT structure.