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β-Ga _2 O _3 power diodes were expected to possess low turn-on voltage ( V _on ), low reverse leakage ( J _R ), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga _2 O _3 heterojunction barrier Schottky diode (HJBS) with tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p ^+ -NiO to suppress J _R originating from the low Schottky barrier, the blocking capability of β-Ga _2 O _3 HJBS was enhanced. The spacing width of p ^+ -NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga _2 O _3 diodes.