Quantum simulation of the Hubbard model with dopant atoms in silicon
oleh: J. Salfi, J. A. Mol, R. Rahman, G. Klimeck, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2016-04-01 |
Deskripsi
The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.