High-Performance Visible Semiconductor Lasers Operating at 630 nm
oleh: Bocang Qiu, O. P. Kowalski, Stewart McDougall, B. Schmidt, John H. Marsh
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2010-01-01 |
Deskripsi
A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e<sup>2</sup>) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.