Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility
oleh: K. Olejník, V. Schuler, X. Marti, V. Novák, Z. Kašpar, P. Wadley, R. P. Campion, K. W. Edmonds, B. L. Gallagher, J. Garces, M. Baumgartner, P. Gambardella, T. Jungwirth
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2017-05-01 |
Deskripsi
Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.