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Recently, the emergent two-dimensional (2D) ferroelectric materials have provided new possibilities for the miniaturization of ferroelectric systems and the integration of novel 2D nano-electronic devices. In addition to the intrinsic ferroelectrics exfoliated from bulk, 2D heterostructures hybridized from electrically non-polarized van der Waals (vdW) materials have also been proven to be a promising platform for the construction of ferroelectricity. Here, we report 30° twisted bilayer–graphene (TBLG) incommensurate moiré superlattice encapsulated by hexagonal boron nitride (h-BN), in which robust hysteretic resistance was detected at the top interface between h-BN and the TBLG from room temperature down to 40 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>mK</mi></mrow></semantics></math></inline-formula>. The hysteretic phenomenon can be understood by the extra carrier induced by the interfacial 2D ferroelectric polarization, which is estimated to be around <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>0.7</mn><mo> </mo><mi>pC</mi><mo>/</mo><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula>. Our work of interfacial ferroelectric heterostructure achieved by a TBLG/h-BN hybrid system expands the 2D ferroelectric families and opens more possibilities for future coupling the ferroelectricity with rich electronic and optical properties in vdW twistronic devices.