High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

oleh: Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher

Format: Article
Diterbitkan: MDPI AG 2021-09-01

Deskripsi

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm<sup>−3</sup> p doping, a V<sub>th</sub> of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.