Sub-<italic>kT/q</italic> Switching in Strong Inversion in PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Gated Negative Capacitance FETs
oleh: S. Dasgupta, A. Rajashekhar, K. Majumdar, N. Agrawal, A. Razavieh, S. Trolier-Mckinstry, S. Datta
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2015-01-01 |
Deskripsi
Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO<sub>2</sub>) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (I<sub>d</sub> ~ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.