AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
oleh: Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2018-10-01 |
Deskripsi
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3⁻0.6 <inline-formula> <math display="inline"> <semantics> <mi>Ω</mi> </semantics> </math> </inline-formula>·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.