Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot

oleh: Hojeong Ryu, Sungjun Kim

Format: Article
Diterbitkan: MDPI AG 2020-12-01

Deskripsi

In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub>) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via transmission electron microscopy and X-ray photoelectron spectroscopy. The resistive switching and synaptic behaviors were improved by inserting a Si<sub>3</sub>N<sub>4</sub> layer between the HfO<sub>2</sub> and SiO<sub>2</sub> layers. The electric field within SiO<sub>2</sub> was mitigated, thus reducing the current overshoot in the trilayer device. The reset current was considerably reduced in the trilayer device compared to the bilayer device without a Si<sub>3</sub>N<sub>4</sub> layer. Moreover, the nonlinear characteristics in the low-resistance state are helpful for implementing high-density memory. The higher array size in the trilayer device was verified by cross-point array simulation. Finally, the multiple conductance adjustment was demonstrated in the trilayer device by controlling the gradual set and reset switching behavior.