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Absorptivity of three kinds of surface morphology, i.e., V-type groove surface, sinusoidal surface, and random distribution, is investigated using a rigorous electromagnetic theory and a finite element method. Influences of surface contour parameters (span distance, intersection angle, and height) and light wave parameters (incident angle and wavelength) on absorptivity are numerically simulated and analyzed for the three kinds of surfaces, respectively. Absorbing spectra about three silicon wafers with different surface roughness are recorded, and the results are coincident with simulated results.