An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
oleh: Shun-Chang Liu, Chen-Min Dai, Yimeng Min, Yi Hou, Andrew H. Proppe, Ying Zhou, Chao Chen, Shiyou Chen, Jiang Tang, Ding-Jiang Xue, Edward H. Sargent, Jin-Song Hu
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2021-01-01 |
Deskripsi
Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.