Find in Library

The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green&#x0027;s function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (<inline-formula><tex-math notation="LaTeX">$R_{Q}$</tex-math></inline-formula>), quantum capacitance (<inline-formula><tex-math notation="LaTeX">$C_{Q}$</tex-math></inline-formula>), and kinetic inductance (<inline-formula><tex-math notation="LaTeX">$L_{K}$</tex-math></inline-formula>) are computed to be 6.46 k<inline-formula><tex-math notation="LaTeX">$\Omega$</tex-math></inline-formula>, 5.57 fF/<inline-formula><tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula>, and 58.17 nF/<inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.