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Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10−6 A/cm2, has been observed in ZnO based MFIS heterostructure, which becomes ∼5.0 × 10−6 A/cm2 for MFIS with Al:ZnO channel. Observation of counterclockwise butterfly shaped C-V behavior confirms that, hysteresis in C-V is due to spontaneous ferroelectric polarization and field effect. A device with ZnO semiconductor exhibit ∼2700% modulation which decreases to ∼800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application.