An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

oleh: Fan Zhang, Jose F. Castaneda, Timothy H. Gfroerer, Daniel Friedman, Yong-Hang Zhang, Mark W. Wanlass, Yong Zhang

Format: Article
Diterbitkan: Nature Publishing Group 2022-05-01

Deskripsi

A measurement of PL intensity vs. excitation density, with the help of Raman, is shown capable of determine nearly all pertinent parameters of radiative and nonradiative recombination in a semiconductor.