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An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures
oleh: Fan Zhang, Jose F. Castaneda, Timothy H. Gfroerer, Daniel Friedman, Yong-Hang Zhang, Mark W. Wanlass, Yong Zhang
Format: | Article |
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Diterbitkan: | Nature Publishing Group 2022-05-01 |
Deskripsi
A measurement of PL intensity vs. excitation density, with the help of Raman, is shown capable of determine nearly all pertinent parameters of radiative and nonradiative recombination in a semiconductor.