Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films
oleh: Shu Shi, Haolong Xi, Tengfei Cao, Weinan Lin, Zhongran Liu, Jiangzhen Niu, Da Lan, Chenghang Zhou, Jing Cao, Hanxin Su, Tieyang Zhao, Ping Yang, Yao Zhu, Xiaobing Yan, Evgeny Y. Tsymbal, He Tian, Jingsheng Chen
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2023-03-01 |
Deskripsi
Ferroelectric hafnia-based thin films are promising for applications in memories and neuromorphic devices due to their robust ferroelectricity at reduced dimensions. Here, the authors demonstrate stabilization of the metastable orthorhombic phase in Hf0.5 Zr0.5O2 films by interface engineering with a hole doping mechanism.