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This paper presents new photovoltaic solar cells with Cu₂ZnSnSe₄/CH₃NH₃PbI₃(MAPbI₃)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu₂ZnSnSe₄, MAPbI₃ perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI₃ perovskite film was deposited on Cu₂ZnSnSe₄ hole-transporting layer that has been annealed at different temperatures. TheseCu₂ZnSnSe₄ filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu₂ZnSnSe₄ hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 &#176;C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm², and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power <i>P_max</i> was as good as 1.74 mW and the device series-resistance was 17.1 &#937;.