Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂
oleh: Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2022-01-01 |
Deskripsi
We investigated the ferroelectric properties of self-induced HfGeO<sub>x</sub> in a HfO<sub>2</sub> film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric Hf germanate. The proposed ferroelectric IT-GAAFET with short-channel (gate length = 60 nm) exhibited a steep average subthreshold slope of 53 mV/dec, a drain-induced barrier lowering of only 1.7 mV/V, and a high on-off current ratio of <inline-formula> <tex-math notation="LaTeX">$1.7 \times 10^{7}$ </tex-math></inline-formula>. The proposed ferroelectric IT-GAA field-effect transistor can be a candidate for the sub-N3 technology node and ultralow-power, high-performance applications.