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The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices has been investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rf power led to less-apparent switching behavior and increased likelihood of device breakdown. However, high rf power memristors exhibited a reduced switching uniformity as the rf power significantly affected the defect concentration as well as the microstructure of the deposited ZnO films, which determine the switching characteristics and performance of memristor devices.