Reversible displacive transformation in MnTe polymorphic semiconductor

oleh: Shunsuke Mori, Shogo Hatayama, Yi Shuang, Daisuke Ando, Yuji Sutou

Format: Article
Diterbitkan: Nature Portfolio 2020-01-01

Deskripsi

Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.