Low Resistance TiO<sub>2</sub>/p-Si Heterojunction for Tandem Solar Cells
oleh: Steponas Ašmontas, Maksimas Anbinderis, Jonas Gradauskas, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Algirdas Selskis, Laurynas Staišiūnas, Sandra Stanionytė, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2020-06-01 |
Deskripsi
Niobium-doped titanium dioxide (Ti<sub>1−x</sub>Nb<sub>x</sub>O<sub>2</sub>) films were grown on <i>p</i>-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H<sub>2</sub> atmosphere for 30 min. It was shown that the Ti<sub>0.72</sub>Nb<sub>0</sub>.<sub>28</sub>O<sub>2</sub>/<i>p</i><sup>+</sup>-Si heterojunction fabricated on low resistivity silicon (10<sup>−3</sup> Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm<sup>2</sup>. As the resistance dependence on temperature revealed, the current across the Ti<sub>0.72</sub>Nb<sub>0.28</sub>O<sub>2</sub>/<i>p</i><sup>+</sup>-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.