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Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl₄) and methane (CH₄) as precursors. The effects of deposition temperature (<i>T</i>_dep) and total pressure (<i>P</i>_tot) on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced by <i>T</i>_dep. With increasing <i>T</i>_dep, the columnar grains transformed from &lt;111&gt;- to &lt;110&gt;-oriented. The arrangement of &lt;111&gt;-oriented columnar grains was controlled by <i>P</i>_tot. Lotus-, turtle-, thorn-, and strawberry-like surface morphologies were naturally contributed by different arrangements of &lt;111&gt;-oriented grains, and the deposition mechanism was discussed. The wetting behaviors of CVD-SiC samples by molten aluminum were also examined at 1173 K in a high vacuum atmosphere.