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The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 10¹² Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 10⁴ at zero voltage. It is found that a relatively lower growth rate for the GaN epilayer is preferred to improve the performance of the Schottky-type photodetectors due to the better microstructure and surface properties.