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Zr&#8722;Si&#8722;N films with atomic ratios of N/(Zr + Si) of 0.54&#8722;0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)&#8722;radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0&#8722;150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr&#8722;Si&#8722;N films. The results indicated that Zr&#8722;Si&#8722;N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2&#8722;34.6 GPa accompanied with a compressive stress of 4.3&#8722;6.4 GPa, an <i>H/E*</i> level of 0.080&#8722;0.107, an <i>H</i>³<i>/E*</i>² level of 0.21&#8722;0.39 GPa, and an elastic recovery of 62&#8722;72%.