Find in Library

<p>Abstract</p><p>InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2&#176; misorientation angle towards [01&#8722;1], and GaAs (<it>n</it>11)B (<it>n</it> = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0&#176; to 15.8&#176;, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100), which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.</p>