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The study of photovoltaic solar cells has been an exciting field of research because of their environmentally friendly nature. Scientists are continuously searching for new methods to develop solar cells that are highly efficient and cost-effective. One promising option is the use of Copper Antimony Sulphide (CuSbS _2 ) based ternary compound semiconductor in ultrathin film photovoltaic cells. This material has a high absorption coefficient, low cost, and is readily available in the earth’s crust. These characteristics make it an ideal candidate for use as a thin-film absorber layer in solar cells. In this work, FTO/CdS/In _2 S _3 /CuSbS _2 /Spiro-OMeTAD/Au device is proposed to improve the efficiency of experimentally designed CuSbS _2 -based thin film solar cells using numerical modeling. Device simulation was carried out using SCAPS-1D software, and the illumination spectrum used for this optimization was 1.5 AM. The simulated results from SCAPS-1D were compared to the experimental data. After optimizing the device parameters all the electrical parameters of the solar cell were improved. The optimized CuSbS _2 -based device shows power conversion efficiency (PCE) of 21.11% with short circuit current density (J _sc ) of 20.96 mA cm ^−2 , open circuit voltage (V _oc ) of 1.23 V, and fill factor (FF) of 81.84%. Based on the simulation results, it is possible to increase the performance of the device by varying different parameters such as the defect density of each layer, interfacial defect density, thickness, and doping concentration.