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An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates QVSJ to significantly improve the relationship between breakdown voltage (BV) and specific on-state resistance (R_ON,SP). The simulation results show that compared with the conventional QVSJ T-LDMOS, the proposed one gains the R_ON,SP reduced by about 79% under the same BV requirement of about 500 V. It therefore presents an excellent figure of merit (FOM) (FOM = BV²/R_ON,SP, Baliga's FOM) up to 29.8 MW/cm², which is superior to the prior art and exhibits a bright prospect of saving energy.