High electron mobility in strained GaAs nanowires
oleh: Leila Balaghi, Si Shan, Ivan Fotev, Finn Moebus, Rakesh Rana, Tommaso Venanzi, René Hübner, Thomas Mikolajick, Harald Schneider, Manfred Helm, Alexej Pashkin, Emmanouil Dimakis
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2021-11-01 |
Deskripsi
Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.