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In this work, we measure polarization-resolved photoluminescence spectra from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom O-band with strain-coupled bilayer structure. QDs often show fine-structure splitting (FSS) ~100 μeV in uniform anisotropy and valence-band mixing of heavy holes (HH) and light holes (LH); the biaxial strain also induces LH excitons with small FSS (especially XX, <5 μeV, 70% of QDs); delocalized LH reduces the Coulomb interaction between holes V<i>_hh</i> and enhances population on LH excitons XX, XX₁₁, X₁₁⁺ and XX₂₁⁺.