High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes
oleh: S. Yoshida, H. C. Lin, A. Vais, A. Alian, J. Franco, S. El Kazzi, Y. Mols, Y. Miyanami, M. Nakazawa, N. Collaert, H. Watanabe, A. Thean
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2017-01-01 |
Deskripsi
We have validated that the electrical performances of the In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs such as sub-threshold slope (SS) and electron mobility were dependent on interfacial reactions in the metal/highk/InGaAs gate stacks which could be controlled remotely by choice of the metal electrodes. We demonstrated In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs with high mobility (peak mobility ~1300 cm<sup>2</sup>/Vs) and superior SS performance (SS 76.4 mV/dec) at the scaled CET region owing to the remote reduction of the native III-V oxide by the TiN electrodes.