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We report the discovery of Q-silicon with an atomic density of 60% higher than crystalline silicon while keeping the bonding characteristics the same as normal silicon. Distinct amorphous phases are created, when one, two, or three tetrahedra are randomly packed, and a crystalline phase of Q-silicon is formed when subunit cells are arranged along <110> directions with alternate holes. Nanosecond laser melting of amorphous silicon in an undercooled state and quenching have created Q-silicon with robust ferromagnetism compared to the diamagnetism of silicon. The blocking temperature of Q-silicon is estimated to be over 400 K, thus opening a new frontier for spin-based computing and atomic-level storage.