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Abstract The aim of this study is to examine the analog/RF performance characteristics of graphene nanoribbon (GNR) field-effect transistors (FETs) using a novel technique called underlap engineering. The study employs self-consistent atomistic simulations and the non-equilibrium Green's function (NEGF) formalism. Initially, the optimal underlap length for the GNR-FET by device has been determined evaluating the ON-current (I ON ) to OFF-current (I OFF ) ratio, which is a critical parameter for digital applications. Subsequently, the impact of underlap engineering on analog/RF performance metrics has been analyzed and conducting a comprehensive trade-off analysis considering parameters such as intrinsic-gain, transistor efficiency, and device cut-off frequency. The results demonstrate that the device incorporating the underlap mechanism exhibits superior performance in terms of the I ON /I OFF ratio, transconductance generation factor (TGF), output resistance (r 0 ), intrinsic gain (g m r 0 ), gain frequency product (GFP), and gain transfer frequency product (GTFP). However, the device without the underlap effect demonstrates the highest transconductance (g m ) and cut-off frequency (f T ). Finally, a linearity analysis has been conducted to compare the optimized GNR-FET device with the conventional GNR-FET device without the underlap effect.