Corrigendum: Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain (2021 New J. Phys. 23 073002)

oleh: Fabio Candolfi, Johannes A F Lehmeyer, Maximilian Rühl, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B Weber

Format: Article
Diterbitkan: IOP Publishing 2024-01-01

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