Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
oleh: Zhang Limin, Zhang Xiaodong, You Wei, Yang Zhen, Wang WenXiu, Ge Qing, Liu Zhengmin
| Format: | Article |
|---|---|
| Diterbitkan: | De Gruyter 2008-06-01 |
Deskripsi
Subjek
78.66.fd; 78.55.-m; 85.40.ry; 68.55.ln; gallium nitride (gan); photoluminescence spectra; ion implantation