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Vacancies engineering based on semiconductors is an effective method to enhance photoelectrochemical activity. Herein, we used a facile one-step solvothermal method to prepare sulfur vacancies modified ultrathin two-dimensional (2D) ZnIn₂S₄ nanosheets. The photon-to-current efficiency of sulfur vacancies modified ultrathin 2D ZnIn₂S₄ nanosheets is 1.82-fold than ZnIn₂S₄ nanosheets without sulfur vacancies and 2.04-fold than multilayer ZnIn₂S₄. The better performances can be attributed to the introduced sulfur vacancies in ZnIn₂S₄, which influence the electronic structure of ZnIn₂S₄ to absorb more visible light and act as the electrons trapping sites to suppress the recombination of photo-generated carriers. These results provide a new route to designing efficient photocatalyst by introducing sulfur vacancies.