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A Comprehensive Study of Sn-Ga<sub>2</sub>Te<sub>3</sub>-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics
oleh: Huan Zhang, Yaqi Zhang, Gong Li
Format: | Article |
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Diterbitkan: | MDPI AG 2023-03-01 |
Deskripsi
In this paper, newly developed tellurium-based [(Ga<sub>2</sub>Te<sub>3</sub>)<sub>34</sub>(SnTe)<sub>66</sub>]<sub>100-x</sub>-Sn<sub>x</sub> amorphous alloys were prepared by the melt-spun method, with a linear velocity of 40 m/s and injection pressure of 20 kPa under an Ar atmosphere. The glass-forming region was identified in the range of <i>x</i> = 0 to 10 mol%. The glass transition temperature <i>T<sub>g</sub></i> and crystallization onset temperature <i>T<sub>c</sub></i> decreased monotonically with the increasing Sn content in the whole compositional range, resulting in the decrease in the stability criterion Δ<i>T</i> from 33 K (S2) to 23 K (S10). The crystallization kinetics were systematically investigated based on the differential scanning calorimeter (DSC) under non-isothermal conditions. The activation energies of the S8 amorphous sample determined by Kissinger and Ozawa equations were <i>E<sub>g</sub></i> (201.1~209.6 kJ/mol), <i>E<sub>c</sub></i> (188.7~198.3 kJ/mol), <i>E<sub>p</sub></i><sub>1</sub> (229.8~240.1 kJ/mol) and <i>E<sub>p</sub></i><sub>2</sub> (264.2~272.6 kJ/mol), respectively. The microscopic structure of the S8 amorphous sample and its annealed glass-ceramics were also analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). The crystalline products were identified as having a SnTe phase (primary crystalline phase) and Ga<sub>6</sub>SnTe<sub>10</sub> phase, thus providing a promising candidate for the development of high-performance thermoelectric glass-ceramic materials.