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We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stress-manipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constant of the AlNO buffer was adjusted by oxygen flow. As a result, the dislocation density and the in-plane compressive stress caused by lattice mismatch were greatly reduced, while the interface quality of the InGaN/GaN multiple quantum wells and the uniformity of the indium composition were greatly improved. At 20A/cm², the external quantum efficiency and wall plug efficiency of the 526.4-nm-green LEDs grown on the sputtered AlNO buffer reached 46.1% and 41.9%, which were both higher than reported values.