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Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concentration range, Si:HfO₂ layers based on thermal atomic layer deposition often exhibited a crossflow pattern across 300 mm wafer. Here, plasma enhanced atomic layer deposition is explored as an alternative method for producing Si-doped HfO₂ layers, and their ferroelectric and pyroelectric properties are compared.