Erratum: “Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator” [AIP Advances 1, 032167 (2011)]
oleh: Ni Zhong, Hisashi Shima, Hiro Akinaga
| Format: | Article |
|---|---|
| Diterbitkan: | AIP Publishing LLC 2011-12-01 |
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